rf & microwave transistors 800-960mhz base station applications .230 6lfl (m118) epoxy sealed . 800 - 960 mhz . 24 volts . efficiency 50% . common emitter . gold metallization . class ab linear operation . p out = 15 w min. with 8.0 db gain description the SD1423 is a gold metallization epitaxial silicon npn planar transistor using diffused emitter ballast resistors for high linearity class ab operation for cellular base station applications. the SD1423 is designed as a medium power output device or as the driver for the sd1424. pin connection branding SD1423 order code SD1423 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 48 v v ceo collector-emitter voltage 25 v v ces collector-emitter voltage 45 v v ebo emitter-base voltage 3.5 v i c device current 2.5 a p diss power dissipation 29 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 6 c/w SD1423 1. collector 3. emitter 2. base thermal data august 22, 1996 1/4
symbol test conditions value unit min. typ. max. p out f = 960 mhz v cc = 24 v i cq = 75 ma 15 w p g f = 960 mhz v cc = 24 v i cq = 75 ma 8db h c f = 960 mhz v cc = 24 v i cq = 75 ma 45 50 % c ob f = 1 mhz v cb = 24v 2024pf static symbol test conditions value unit min. typ. max. bv cbo i c = 50ma i e = 0ma 48 50 v bv ceo i c = 20ma i b = 0ma 25 30 v bv ebo i e = 5ma i c = 0ma 3.5 4.0 v i cbo v cb = 24v i e = 0ma 1.0ma h fe v ce = 10v i c = 100ma 20 100 dynamic typical performance power output vs power input freq. z in ( w )z cl ( w ) 900 mhz 1.30 + j 1.98 3.99 + j 5.55 930 mhz 1.42 + j 2.31 3.18 + j 4.97 960 mhz 1.45 + j 2.62 2.96 + j 4.07 p out = 15 w v ce = 75 ma i cq = 24 v impedance data electrical specifications (t case = 25 c) SD1423 2/4
test circuit c1, c2 :0.8 - 8.0pfgigatrim variable capacitor c3, c6, c7, c8 :100pf atc chip capacitor c4 : 10 m f, 63v electrolytic c5 : 0.1 m f capacitor ck06bx104k d1, d2 :SD1423 trasistors used as diodes l1, l3 :4 turn, #22 awg l2 : #22 awg, ferrite core q1 : SD1423 b ias transistor q2 : SD1423 transistor under test r1 : 1.5 k w , 1/4w resistor r2 : 5k w 5% potentiometer board material: 3m teflon fiberglass er = 2.55, h = .030" all dimensions in mils unless otherwise specified test circuit dimensions SD1423 3/4
package mechanical data ref.: udcs doc. no.1010941 rev. b test circuit layout information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specificat ions mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information pr eviously supplied. sgs-thomson microelectronics products are not authorized for use as cri tical comp onents in life support devices or systems without express written approval of sgs-thomson microelectronics. ?1996 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - SD1423 4/4
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